Most of the topography measurements presented below were carried out in the ambient conditions with the scanning probe microscope (SPM) Solver™ P4 from NT-MDT Co. using silicon cantilevers manufactured by the Institute of Physical Problems (typical probe radius is less than 10 nm). The microscope was placed on a heavy base equipped with a passive seismic isolation and passive thermoisolating box, both homemade. The thermoisolating box also serves as an acoustic cabinet. No image smoothings were executed in the most work scans given below. To get enlarged picture, click on it
The carbon nanostructures in the form of nanotori (nanodonuts, AFM Smena™ HV, ambient conditions, tapping mode, k≈12 N/m, f=279 kHz) were obtained by method of plasma-enhanced chemical vapor deposition (PECVD) on the experimental system “Diamond”. The largest nanotori have outer diameter equal to 960 nm, inner diameter – 230 nm, nanodonut height – 150 nm. By using highly reactive catalytic nanoparticles of nickel, the temperature of the synthesis process was decreased from 750°C to 150°C. Polished Si-wafer was used as a substrate. The experimental results were obtained with the active participation of researchers from the Institute of Physical Problems: postgraduate P. V. Azanov, Prof. E. A. Ilyichev, Dr. G. N. Petruhin, and postgraduate L. L. Kupchenko
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Zoomed in surface area consisting of separate “Nanodonuts”
Close-up view of single “Nanodonut”
 film nanostructured in oxygen plasma, 1.gif)
Spin-coated poly(methyl methacrylate) (PMMA) film after treatment in nonequilibrium oxygen RF-plasma (AFM, tapping mode, k≈12 N/m, f=131 kHz). Оperating frequency of RF-oscillator made 13.56 MHz, residual pressure 10-20 Pa, glow discharge power 500 W. Polished Si-wafer was used as a substrate
 film nanostructured in oxygen plasma, 2.gif)
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 film nanostructured in oxygen plasma, 3.gif)
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 film nanostructured in oxygen plasma, 4.gif)
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Carbon film on polyurethane substrate deposited in pulsed arc plasma (AFM, tapping mode, k≈12 N/m, f=139 kHz). The carbon film presented is a prototype of biocompatible coating of human artificial blood vessels. The coating prevents growth of blood platelets on vessel walls. The sample is prepared by senior researcher A. G. Kirilenko (Institute of Physical Problems)
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Zoomed in surface area. Gyrus-like surface morphology
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An example of carbon clusters plasma-deposited on low-density polyethylene as a substrate (AFM, tapping mode, k≈20 N/m, f=132 kHz). This coating is considered to be perspective for engineering of human blood-vessel prostheses with reduced capacity for thrombocyte adsorption. The sample is fabricated by senior researcher A. G. Kirilenko (Institute of Physical Problems)
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Hollows (pore bottoms) in the aluminum substrate obtained after removing porous alumina (AFM, tapping mode, k≈20 N/m, f=487 kHz). The sample is prepared by Prof. S. A. Gavrilov (Moscow Institute of Electronic Technology)
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Initial morphology of a thin copper film before mechanical modification (AFM, k≈90 N/m, f=403 kHz, film thickness 75 nm, Si-wafer substrate). The film is deposited by Dr. A. G. Klimovitskiy (Moscow Institute of Electronic Technology)
Plastic modification of the copper film: 10×10 array of cavities. The imprints were formed with Si-probe mechanically indented in plastic copper film. Two top rows are invisible because of drift. Shape of the imprints is also drift-distorted
Initial ridged morphology of a textured aluminum foil before modification (AFM, k≈90 N/m, f=403 kHz)
Plastic modification of the aluminum surface: 5×5 array of cavities. The imprints were formed with Si-probe mechanically indented in plastic aluminum foil. The top row is seen incompletely because of drift distortion
High-contrast rectangle imprints of Si-probe on electrochemically polished aluminum foil. The initial EC-polished aluminum surface was fabricated by Prof. S. A. Gavrilov (Moscow Institute of Electronic Technology)
Nanostructured aluminum surface prepared by electrochemical polishing of a textured high-purity aluminum foil (AFM, tapping mode, k≈20 N/m, f=153 kHz). This is quasiordered surface, it is used as a substrate for subsequent manufacture of ordered quantum wire arrays applied in up-to-date optoelectronic devices. The sample is fabricated by Prof. S. A. Gavrilov (Moscow Institute of Electronic Technology)
Formation of aluminum pillars from parallel ridges. Pattern type and dimensions of the surface elements depend on conditions of the electrochemical etching
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Phase image of the previous area
Microstructured aluminum surface of plain “knobs” prepared during low vacuum condensation of aluminum vapours (AFM, tapping mode, k≈10 N/m, f=107 kHz). Field of application is high-value electrolytic capacitors. Effective square of the microstructured surface is 200 times greater than the initial plain area of the aluminum foil used as a substrate. This sample is fabricated by Prof. S. A. Gavrilov (Moscow Institute of Electronic Technology)
Joint of two neighbor plain knobs
Zoomed in area of the joint
Phase image of the joint
Ordered system of pores in alumina fabricated by electrochemical etching of high-purity aluminum foil in oxalic acid solution (AFM, tapping mode, k≈100 N/m, f=417 kHz). This surface demonstrates a strong hydrophilic behavior. In order to resolve the pores, a low-temperature heating, dry glove box conditions or a low vacuum environment is required. The sample is prepared by Prof. S. A. Gavrilov (Moscow Institute of Electronic Technology)
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Through ordered pores in a thin alumina membrane (AFM, tapping mode, k≈100 N/m, f=487 kHz). The sample is prepared by Prof. S. A. Gavrilov (Moscow Institute of Electronic Technology)
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Disordered array of pores in a thin alumina membrane (AFM, tapping mode, k≈20 N/m, f=273 kHz). The sample is prepared by Prof. S. A. Gavrilov (Moscow Institute of Electronic Technology)
Phase image
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Phase image
Quasiordered array of opal balls (synthetic opal) assembled on Si-wafer as a substrate (AFM, tapping mode, k≈90 N/m, f=417 kHz). Opal balls are SiO2 spherical particles deposited from suspension on a plain substrate. The deposited solids are used as photonic crystals. Point packing defects are well noticeable on the presented image. Some balls are weakly bounded and may be moved with the probe across the surface. The sample is prepared by Prof. G. A. Emelchenko (Institute of Solid State Physics, Russian Academy of Sciences)
Ordered array of opal balls on Si-wafer as a substrate (AFM, tapping mode, k≈90 N/m, f=418 kHz). The sample is prepared by Prof. G. A. Emelchenko (Institute of Solid State Physics, Russian Academy of Sciences)
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Gold-covered ordered array of opal balls (STM, Utun=300 mV, Itun=1.0 nA, thickness of gold film 40 nm, molybdenum sublayer thickness 10 nm). Thin metal films are deposited by using electroerosion plasma coupled with laser-stimulation (neutral metal particles are separated from ions by means of magnetic field). The process is developed by Dr. V. M. Roschin (Moscow Institute of Electronic Technology)
Close-up view of a single opal ball. Separate grains of the gold film are well noticeable in the image
Several ordered areas is easily discerned each of which is composed of nonspherical opal particles (AFM, tapping mode, k≈100 N/m, f=487 kHz). Mean particle size makes 270 nm. The sample is prepared by Prof. G. A. Emelchenko (Institute of Solid State Physics, Russian Academy of Sciences)
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Close-up view of “Inca’s stonework”
Single nonspherical opaline particle
These scans demonstrate carbon clusters plasma-deposited at low temperature (20-60°C) on electron resist (methylmethacrylate) as a substrate (AFM, tapping mode, k≈20 N/m, f=153 kHz). The substrate was preirradiated with ultraviolet (λ=180…260 nm) for better flatness. The carbon film imaged is a prototype of biocompatible coating for artificial human crystalline lens. The coating shortens healing time after implantation. The sample is fabricated by senior researcher A. G. Kirilenko (Institute of Physical Problems)
Oxygen-induced submicron structuring of Si(100) surface (AFM, contact mode). The sample was prepared in laboratory of Dr. V. D. Borman (Moscow Engineering Physics Institute)
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Superstructure formation on silicon crystal surface
Pyramidal pits etched in silicon
Close-up view of internal structure of the pyramidal pit
The topography images presented below were obtained with the optical profiler (interference microscope) Wyko NT9300 from Bruker Corp. Two main measurement modes of the instrument – the Vertical Scanning Interferometry (VSI) and the Phase Shifting Interferometry (PSI) were used depending on the typical vertical scale of the surface under investigation. Only compressed-air vibration isolation means build in the instrument were employed for seismic isolation. No intense smoothings or any artificial improvements were executed on the most images given below. To get enlarged picture, click on it
The carbon dendritic patterns were synthesized by plasma-enhanced chemical vapor deposition (PECVD) method. Catalytic nanoparticles of nickel on polished Si-wafer as a substrate were used in the process. Optical profiler settings: magnification 101×, PSI measurement mode, scan size 63×47 µm. The sample was prepared with active participation of postgraduate P. V. Azanov (Institute of Physical Problems)
The infrared detector represents a microelectromechanical system (MEMS). The detector is composed of four bimaterial elements. Each element consists of a submicron thickness membrane supported by two bimaterial legs. The legs have two layers of material with different coefficients of thermal expansion. When incident infrared radiation heats the membrane, the legs are also heated. The leg heating induces a stress due to difference between the coefficients of thermal expansion. The stress leads to a flexure of the legs that, in turn, moves the membrane normal to the substrate. Sensitivity of best bimaterial IR-detectors may reach hundreds of nanometers per Kelvin.
Optical profiler settings: magnification 20×, VSI measurement mode, scan size 308×231 µm. The IR-detector was developed and fabricated by the group of researches from the Moscow Institute of Electronic Technology: Assoc. Prof. E. A. Fetisov, Dr. R. Z. Khafizov, Prof. V. A. Fedirko, Dr. A. M. Belin, Dr. V. J. Zolotorev, and G. A. Rudakov
Zoomed in area. Optical profiler settings: magnification 28×, VSI measurement mode, scan size 228×171 µm
The infrared images presented below were obtained with the infrared microscope (IRM) G3 SC5000 from FLIR Systems, Inc. IRM technical parameters: magnification 2.75×, field of view 2×2 mm, spectrum range 3.7-4.8 µm, temperature resolution 25 mK, InSb focal point array (FPA) 640×512 elements, operating temperature 80.75 K. The infrared microscopy is very useful when locations of overheatings, shorts or current leakages in IC chips should be found. The mentioned IC faults usually results in an abrupt localized heat dissipation, which could be easily detected on an IR-image. To get enlarged picture, click on it
The infrared image of a chip of a digital IC before power on
The infrared image of the same chip after power on 1.5 V. The bright circled area is the place where a current leakage of the chip capacitor was detected. The cause of the fault is a low quality of dielectric layer. IR-microscope settings: integration time 2 ms
The infrared image of a chip of a digital IC before power on
The infrared image of the same chip after power on. The bright circled area is the place where a local overheating of the chip was detected. IR-microscope settings: integration time 2 ms
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